DESCRIPTION AND APPLICATIONS

The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High

Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1V500 also features Si3N4 passivation and is available in a flanged ceramic package (P100). The LPV1500 features plated source thru-vias for improved performance.

FEATURES

•  +31.5 dBm Typical Power at 18 GHz

•  8.5 dB Typical Power Gain at 18 GHz

•  +27 dBm at 3.3V Battery Voltage

•  +45 dBm Typical Intercept Point

•  50% Power-Added-Efficiency at 18 GHz

•  Plated Source Thru-Vias