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June 2004

STS8DNH3LL

DUAL N-CHANNEL 30V - 0.018

Ω - 8A SO-8

LOW GATE CHARGE STripFET™ III POWER MOSFET

Rev.0.2

■

Ω

■

■

CONDUCTION LOSSES REDUCED

■

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific MOSFET is the Third generation

of STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor shows the

best trade-off between on-resistance and gate charge.

When used as high and low side in buck regulators, it

gives the best performance in terms of both conduction

and switching losses. This is extremely important for

motherboards where fast switching and high efficiency

are of paramount importance.

APPLICATIONS

■

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

Ordering Information

TYPE

STS8DNH3LL

30 V

<0.022

Ω

8 A

SALES TYPE

MARKING

PACKAGE

PACKAGING

STS8DNH3LL

S8DNH3LL

SO-8

TAPE & REEL

SO-8

ABSOLUTE MAXIMUM RATINGS

(

Symbol

Parameter

Value

Unit

30

V

Ω)

30

V

Gate- source Voltage

± 16

V

8A

5A

•)

Drain Current (pulsed)

32

A

2W

INTERNAL SCHEMATIC DIAGRAM