SD11801

1200V Silicon Carbide Schottky Diode - 3

Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407, USA • +1 561-848-4311 • sales@solitrondevices.com

© 2019 Solitron Devices, Inc.

This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice.

ELECTRICAL SPECIFICATIONS

Typical @ 25°C unless otherwise noted

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Blocking Voltage

V

DC

1200

1300

V

Forward Voltage

I

I

V

F

1.4

1.7

V

V

Reverse Current

V

V

I

RM

12

80

200

1000

µA

µA

Total Capacitive Charge

I

Q

C

19

nC

Total Capacitance

100V, f = 1MHz

200V, f = 1MHz

400V, f = 1MHz

600V, f = 1MHz

800V, f = 1MHz

1000V, f = 1MHz

C

77

56

41

39

39

39

pF

Switching Time

I

T

rr

20

ns

PACKAGE OUTLINE - TO-247-2L

THERMAL AND MECHANICAL CHARACTERISTICS

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance, Junction to Case

R

Ө(JC)

1.7

°C/W

Weight

W

5.7

5.9

g

Mounting Torque

M

S

1.4

1.76

N-m

PIN DESCRIPTION

Pin

Description

1

Cathode

2

Anode

SCHEMATIC

1

2

0.140 (3.26)

0.242 (6.15)

0.626

(15.90)

0.250

(6.35)

0.506

(12.85)

0.220 (5.60)

0.173 (4.40)

0.819 (20.80)

0.823 (20.90)

0.168 (4.27)

0.798 (20.27)

0.078

(1.98)

0.047

(1.19)

0.023

(0.58)

0.094

(2.40)

0.079

(2.00)

0.198

(5.08)

0.428

(10.87)

0.120

(3.05)

0.025 ±0.005

(0.64 ±0.13)

dia. 0.118 x 0.007 (dia. 3.0 x 0.18)

DEEP MAX. EJECTOR PIN MARKS [x2]

HEATSINK SURFACE

TAPERED HOLE

dia. 0.138~0.144 (dia, 3.50~3.65) HEATSINK SIDE

dia. 0.145 (dia. 3.68) FRONT SIDE

1

2