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3

SM2558NUB

Copyright

© Sinopower Semiconductor, Inc.

Rev. A.5 - July, 2015

®

SM2558NUB

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Dynamic Characteristics

b

R

G

Gate Resistance

V

-

1.6

-

Ω

C

iss

Input Capacitance

-

2000

2800

C

oss

Output Capacitance

-

400

-

Reverse Transfer Capacitance

Frequency=1.0MHz

-

320

-

pF

Turn-on Delay Time

-

14

26

Turn-on Rise Time

-

12

23

Turn-off Delay Time

-

49

89

Turn-off Fall Time

Ω

-

21

39

ns

Gate Charge Characteristics

b

Q

g

Total Gate Charge

-

22.5

32

Q

gs

Gate-Source Charge

-

5.6

-

Q

gd

Gate-Drain Charge

-

13

-

nC

Note a : Pulse test ; pulse width

≤300

Note b : Guaranteed by design, not subject to production testing.