SM2610NSC datasheet(3/11 Pages) SINOPWER

Part #	SM2610NSC

Description	N-Channel Enhancement Mode MOSFET

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	SINOPWER [Sinopower Semiconductor Inc]

Direct Link	http://www.sinopowersemi.com/Form2/index.aspx

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SM2610NSC

Rev. A.4 - August, 2014

Electrical Characteristics (Cont.) (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

1.5

Ω

Ciss

Input Capacitance

410

560

710

Coss

Output Capacitance

113

Crss

Reverse Transfer Capacitance

GS=0V,

VDS=15V,

Frequency=1.0MHz

td(ON)

Turn-on Delay Time

7.5

Turn-on Rise Time

9.5

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

VDD=15V, RL=15Ω,

DS=1A, VGEN=10V,

G=6Ω

4.4

Gate Charge Characteristics

Total Gate Charge

VDS=15V, VGS=4.5V,

IDS=8A

Total Gate Charge

gth

Threshold Gate Charge

0.95

1.3

Qgs

Gate-Source Charge

1.9

2.5

Qgd

Gate-Drain Charge

VDS=15V, VGS=10V,

DS=8A

1.8

2.3

Note a：Pulse test ; pulse width

≤ 300

µs, duty cycle ≤ 2%.

Note b：Guaranteed by design, not subject to production testing.

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