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Die Size (Unsawn)

1730 x 1730

59 x 59

µm

mils

Anode Pad Size

1321 x 1321

52 x 52

µm

mils

Die Thickness

270 (±20)

10.63 (0.79)

µm

mils

Top Metal Composition

Al ≥ 2.5µm

Back Metal Composition

Ti/Ni/Ag ≥ 3µm

40V 3A Schottky Diode – 1N5822

Schottky Barrier Rectifier diode in bare die form

Guardring for over-voltage protection

Very small conduction losses

Extremely fast switching

Low forward voltage drop

High reliability tested grades.

Rev 1.0

18/01/19

Features:

Die Dimensions in µm (mils)

Ordering Information

The following part suffixes apply:

No suffix - MIL-STD-750 /2073 Visual Inspection

“H” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class H LAT

“K” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

Supply Formats:

Mechanical Specification

Default – Die in Waffle Pack (100 per tray capacity)

Sawn Wafer on Tape – By specific request

Unsawn Wafer – By specific request

With additional electrical selection – By specific request

CHIP BACKSIDE IS CATHODE

1321 (52)

1499 (59)

ANODE

ANODE