Approval Sheet

Page 2 of 8

ASC_RFASWAM3489ATF09_V04

Mar. 2018

FEATURES



Low Insertion Loss

：0.5dB typ. @ 2.7GHz



High Isolation

：25dB typ. @ 2.7GHz



Low control voltage

：1.35V to 3V



High ESD tolerance of 1kV HBM at all pins

：



Miniature footprint



Moisture Sensitive Level 3 (MSL3)

Description



The RFASWAM3489ATF09 is a SOI (Silicon On Insulator) Single-Pole, Double-Throw(SPDT) high power switch that



The RFASWAM3489ATF09 features very high isolation with very low DC power consumption.



The RFASWAM3489ATF09 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors

are required for all RF ports unless DC is biased externally.

Application



Multi-mode 2G/3G, LTE application receive system.

Block Diagram and Pin Out (Top View)

Pin Names and Descriptions

Pin

Name

Description

Pin

Name

Description

1

DC control voltage

4

RF2

RF path 2

2

GND

Ground

5

RFC

RF common port

3

VDD

DC power supply

6

RF1

RF path 1

1

2

3

6

5

4

RF1

RF2

ANT

VDD

Bias

Decoder