B0520WS datasheet(1/3 Pages) LEIDITECH

Part #	B0520WS

Description	Schottky Barrier Diode

PDF	3 Pages

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Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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SOD-323 Plastic-Encapsulate Diodes

B0520WS

Low Forward Voltage Drop

Guard Ring Construction for Transient Protection

High Conductance

Also Available in Lead Free Version

Maximum Ratings @Ta=25

℃

Parameter

Symbo

Unit

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

VRRM

VRWM

VR

V

RMS reverse voltage reverse voltage (DC)

VR(RMS)

14

Average rectified output current

Io

0.5

Non-repetitive Peak Forward Surge Current

@t=8.3ms

IFSM

5.5

A

Power dissipation

PD

200

mW

Thermal resistance junction to ambient

RθJA

500

℃/W

Junction temperature

Tj

1

25

℃

Storage temperature

TSTG

-

55~+150

℃

Voltage rate of change

dv/dt

1000

V/μ

s

Electrical Characteristics @Ta=25

℃

Capacitance between terminals

CT

pF

VR=1,f=1MHz

SOD-323

MARKING:B2

The marking bar indicates the cathode

Solid dot = Green molding compound device,if none,

the normal device.

FEATURES

V

20

Value

Symbol

Test conditions

Reverse breakdown voltage

V(BR)

IR=250uA

V

Reverse current

IR

VR=10V

IF

Forward voltage

VF

IF

0.39

V

uA

=0.5A

=0.1A

A

Min

Max

Unit

20

VR=20V

75

250

0.33

170

Typ

Schottky Barrier Diode

Rev :

www.leiditech.com

01.06.2015

1/3

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B0520WS Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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