TGA4548-SMEVB datasheet(10/17 Pages) QORVO

10 / 17 page

TGA4548-SM

17 – 20 GHz 10 W GaN Power Amplifier

Data Sheet Rev. E, May 27, 2020

10 of 17

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Test conditions unless otherwise noted: CW, VD = 28 V, VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, TBASE

= +85 °C

Thermal and Reliability Information

Parameter

Test Conditions

Value

Units

Thermal Resistance (θJC) (1)

TBASE = 85 °C, VD = 28 V, IDQ = 300 mA, Freq = 20 GHz,

PDISS = 8.4 W

2.38

ºC/W

Channel Temperature, TCH (Under RF) (2)

105

°C

Thermal Resistance (θJC) (1)

TBASE = 85 °C, VD = 28 V, IDQ = 300 mA, Freq = 20 GHz,

ID_DRIVE

≈ 1.45 A, PIN = 22 dBm, POUT ≈ 40 dBm,

PDISS = 31 W

2.42

ºC/W

Channel Temperature, TCH (Under RF) (2)

160

°C

Notes:

Thermal resistance determined to the back of package TBASE

Channel temperature indicated is an IR scan equivalent temperature. Thermal resistance is calculated using this value.

Additional information can be found in the Qorvo Applications Note “GaN Device TCHMAX Theta-JC and Reliability

Estimat

es,” located here https://www.qorvo.com/products/d/da006480

100

120

140

160

180

200

2.0

2.1

2.2

2.3

2.4

2.5

PDISS (W)

RJC and TCH vs. Power Dissipated

Rjc

Tch

TBASE = 85 °C

Frequency (GHz)

Power Dissipated vs. Frequency vs. Pin

Pin = 18 dBm

Pin = 16 dBm

Pin = 14 dBm

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