MSCSM170AM039CT6AG datasheet(4/17 Pages) MICROCHIP

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The following table lists the dynamic characteristics (per SiC MOSFET) of the MSCSM170AM039CT6AG device.

Table 1-3. Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input capacitance

VGS = 0 V

VDS = 1000 V

f = 1 MHz

—

29.7

—

Coss

Output capacitance

—

1.3

—

Crss

Reverse transfer

capacitance

—

0.09

—

Total gate charge

VGS = –5 V/20 V

VBus = 850 V

ID = 270 A

—

1602

—

Qgs

Gate-source charge

—

441

—

Qgd

Gate-drain charge

—

243

—

Td(on)

Turn-on delay time

VGS = –5 V/20 V

VBus = 900 V

ID = 450 A

TJ = 150 °C

RGON = 3.2 Ω

RGOFF = 1.8 Ω

—

Rise time

—

Td(off)

Turn-off delay time

—

153

—

Fall time

—

Eon

Turn-on energy

VGS = –5 V/20 V

VBus = 900 V

ID = 450 A

RGON = 3.2 Ω

RGOFF = 1.8 Ω

TJ = 150 °C

—

20.3

—

Eoff

Turn-off energy

TJ = 150 °C

—

10.8

—

RGint

Internal gate resistance

—

0.65

—

RthJC

Junction-to-case thermal resistance

—

0.063

°C/W

The following table lists the body diode ratings and characteristics (per SiC MOSFET) of the

MSCSM170AM039CT6AG device.

Table 1-4. Body Diode Ratings and Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

VSD

Diode forward voltage

VGS = 0 V; ISD = 270 A

—

3.7

—

VGS = –5 V; ISD = 270 A

—

3.9

—

trr

Reverse recovery time

ISD = 270 A

VGS = –5 V

VR = 900 V

diF/dt = 9000 A/µs

—

Qrr

Reverse recovery charge

—

5.9

—

µC

Irr

Reverse recovery current

—

414

—

MSCSM170AM039CT6AG

Electrical Specifications

Datasheet

DS00003969A-page 4

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