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UR5596-S08-R Datasheet(PDF) 3 Page - Unisonic Technologies

Part # UR5596-S08-R
Description  MOS IC
PDF  11 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UR5596-S08-R Datasheet(HTML) 3 Page - Unisonic Technologies

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UR5596
MOS IC
UNISONICTECHNOLOGIESCO.,LTD
3
www.unisonic.com.tw
QW-R502-045,A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
PVIN, AVIN, VDDQ to GND
VDD
-0.3 ~ +6
V
Supply Voltage
AVIN to GND(Note 1)
VDD
2.2 ~ 5.5
V
Junction Temperature
TJ
125
℃
Operation Temperature(Note 2)
TOPR
-20 ~ +85
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Thermal Resistance Junction-Ambient
θJA
150
℃
/W
Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be
functional, but does not guarantee specific performance limits.
2.The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~+85℃.
3.Absolute maximum ratings indicate limits beyond which damage to the device may occur.
ELECTRICAL CHARACTERISTICS
(TJ=25°C, VIN=AVIN=PVIN=2.5V, VDDQ=2.5V, unless otherwise specified).
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VREF Voltage
VREF
VIN = VDDQ = 2.3V
VIN = VDDQ = 2.5V
VIN = VDDQ = 2.7V
1.135
1.235
1.335
1.158
1.258
1.358
1.185
1.285
1.385
V
IOUT = 0A
VIN = VDDQ = 2.3V
VIN = VDDQ = 2.5V
VIN = VDDQ = 2.7V
1.125
1.225
1.325
1.159
1.259
1.359
1.190
1.290
1.390
VTT Output Voltage
IOUT = ±1.5A
VTT
VIN = VDDQ = 2.3V
VIN = VDDQ = 2.5V
VIN = VDDQ = 2.7V
1.125
1.225
1.325
1.159
1.259
1.359
1.190
1.290
1.390
V
High
VIH
1.9
Minimum Shutdown Level
Low
VIL
0.8
V
VTT Output Voltage Offset (VREF - VTT)
VosTT
VTT
IOUT = 0A
IOUT = -1.5A
IOUT = +1.5A
-20
-25
-25
0
0
0
20
25
25
mV
Quiescent Current
IQ
IOUT = 0A
320
500
µA
Quiescent Current in Shutdown
ISD
SD = 0V
115
150
µA
Shutdown Leakage Current
IQ_SD
SD = 0V
2
5
µA
VTT Leakage Current in Shutdown
IV
SD = 0V
VTT = 1.25V
1
10
µA
VSENSE Input Current
ISENSE
13
nA
VREF Output Impedance
ZVREF
IREF = -30 ~ +30 µA
2.5
kΩ
VDDQ Input Impedance
ZVDDQ
100
kΩ
Thermal Shutdown
TSD
165
℃
Thermal Shutdown Hysteresis
TSD-HYS
10
℃



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