AiT Semiconductor Inc.

www.ait-ic.com

AG2136

MOSFET/IGBT GATE DRIVER

3-PHASE HIGH VOLTAGE DRIVER

REV2.0

- NOV 2017 RELEASED, MAY 2019 UPDATED -

- 8 -

PARAMETER TEMPERATURE TRENDS

Figures 3-24 provide information on the experimental performance of the AG2136 HVIC. The line plotted in

each figure is generated from actual lab data. A small number of individual samples were tested at three

temperatures (-40℃, 25℃, and 125℃) in order to generate the experimental (Exp.) curve. The line labeled

Exp. consist of three data points (one data point at each of the tested temperatures) that have been

connected together to illustrate the understood temperature trend. The individual data points on the curve

were determined by calculating the averaged experimental value of the parameter (for a given temperature).

Figure 5. DT vs. temperature