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MBR820 Datasheet(PDF) 1 Page - SAMYANG ELECTRONICS CO.,LTD. |
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MBR820 Datasheet(HTML) 1 Page - SAMYANG ELECTRONICS CO.,LTD. |
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1 / 2 page ![]() FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability MECHANICAL DATA Case:JEDEC TO-220AC,molded plastic Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 Polarity: As marked Weight: 0.08ounces,2.24 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%. 3.Thermal resistance junction to ambient NOTE: 1. Pulse test:300us pulse width,1% duty cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. For use in low voltage,high frequencyinverters free wheeling,and polarityprotection applications SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 20 --- 200 V CURRENT: 8.0A TO - 220AC The plastic material carries U/L recognition 94V-0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS www.diode.co.kr 1. SAMYANG ELECTRONICS SAM YANG 8A0 ( SINGLE CHIP ) MBR820 --- MBR8200 MBR MBR MBR MBR MBR MBR MBR MBR MBR |
Similar Part No. - MBR820_V01 |
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Similar Description - MBR820_V01 |
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