TF30P02 datasheet(1/5 Pages) TUOFENG

Part #	TF30P02

Description	P -CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	5 Pages

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Manufacturer	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

Direct Link	http://www.sztuofeng.com/?lang=en

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1 / 5 page

●Ordering Information:

●Absolute Maximum Ratings

（T

C =25

℃

）

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current

ID@TC=25

℃

-30

A

ID@TC=75

℃

-21

A

ID @TC=100

℃

-18

A

Pulsed Drain Current ①

IDM

-65

A

Total Power Dissipation

②

PD

15

W

Total Power Dissipation(TA=25

℃)

PD@TA=25

℃

1.0

W

Operating Junction Temperature

T J

-55 to 150

℃

Storage Temperature

TSTG

-55 to 150

℃

Single Pulse Avalanche

Energy@L=0.1mH

EAS

45

mJ

Avalanche Current@L=0.1mH

IAS

-30

A

● General Description

The TF30P02 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low RDS(ON) .

● Features

Advance high cell density Trench technology

Low RDS(ON) to minimize conductive loss

Low Gate Charge for fast switching

Low Thermal resistance

●Application

Load Switches

DC/DC

BLDC Motor driver

● Product Summary

Part NO.

TF30P02

Marking1

Marking2

TF:tuofeng; Y:year code; XX:Week; AA:device code;

Basic ordering unit (pcs)

2500

TF30P02

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

P -CHANNEL ENHANCEMENT MODE POWER MOSFET

1

www.sztuofeng.com

Feb 2022 V1.0

VDS =-20V ID=-30A

R

DSON(-4.5V typ)

DSON(-2.5V typ)

=12.0mΩ

=16.0mΩ

D

G

S

TO-252

D

G

S

TO-251

G

D

S

30P02

TFYXXAA

30P02

TFYXXAA

D

30N02:TF30P02

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TF30P02 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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