STPSC4H065DLF datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STPSC4H065DLF

Description	650 V power Schottky silicon carbide diode

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 12 page

1.1

Characteristics (curves)

Figure 1. Forward voltage drop versus forward current

(typical values, low level)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

IF(A)

VF(V)

Figure 2. Forward voltage drop versus forward current

(typical values, high level)

IF(A)

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

VF(V)

Figure 3. Reverse leakage current versus reverse voltage

applied (typical values)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

100

150

200

250

300

350

400

450

500

550

600

650

Tj=25 °C

Tj=150 °C

Tj=175 °C

VR(V)

IR(µA)

Figure 4. Peak forward current versus case temperature

100

125

150

175

δ=0.1

δ=0.3

δ=0.5

δ=1

δ=0.7

IM(A)

TC(°C)

δ=tp/T

STPSC4H065DLF

Characteristics (curves)

DS12819 - Rev 2

page 4/12

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