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STM32F103CBT7TR Datasheet(PDF) 56 Page - STMicroelectronics |
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STM32F103CBT7TR Datasheet(HTML) 56 Page - STMicroelectronics |
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56 / 116 page ![]() Electrical characteristics STM32F103x8, STM32F103xB 56/116 DS5319 Rev 18 5.3.8 PLL characteristics The parameters given in Table 27 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 9. 5.3.9 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. Table 26. Low-power mode wakeup timings Symbol Parameter Typ Unit tWUSLEEP(1) 1. The wakeup times are measured from the wakeup event to the point in which the user application code reads the first instruction. Wakeup from Sleep mode 1.8 µs tWUSTOP(1) Wakeup from Stop mode (regulator in run mode) 3.6 Wakeup from Stop mode (regulator in low-power mode) 5.4 tWUSTDBY(1) Wakeup from Standby mode 50 Table 27. PLL characteristics Symbol Parameter Value Unit Min(1) 1. Evaluated by characterization, not tested in production, unless otherwise specified. Typ Max(1) fPLL_IN PLL input clock(2) 2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with the range defined by fPLL_OUT. 18.0 25 MHz PLL input clock duty cycle 40 - 60 % fPLL_OUT PLL multiplier output clock 16 - 72 MHz tLOCK PLL lock time - - 200 µs Jitter Cycle-to-cycle jitter - - 300 ps Table 28. Flash memory characteristics Symbol Parameter Conditions Min(1) Typ Max(1) Unit tprog 16-bit programming time TA–40 to +105 °C 40 52.5 70 µs tERASE Page (1 KB) erase time TA –40 to +105 °C 20 - 40 ms tME Mass erase time TA –40 to +105 °C 20 - 40 |
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