BAS45AL

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Nexperia B.V. 2010. All rights reserved.

Product data sheet

Rev. 5 — 6 August 2010

5 of 11

Nexperia

BAS45AL

Low-leakage diode

8.

Test information

VR = 125 V

f = 1 MHz; Tj =25

°C

Fig 4.

Reverse current as a function of junction

temperature

Fig 5.

Diode capacitance as a function of reverse

voltage; typical values

mbd456

104

103

102

10

10−1

150

50

0

100

1

IR

(nA)

Tj (°C)

typ

max

mbg524

010

20

15

5

3

2

0

1

VR (V)

Cd

(pF)

Fig 6.

Reverse recovery time test circuit and waveforms

trr

(1)

+ IF

t

output signal

tr

tp

t

10 %

90 %

VR

input signal

V = VR + IF × RS

RS = 50 Ω

IF

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881