BFR92 datasheet(2/10 Pages) PHILIPS

2 / 10 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR92

DESCRIPTION

NPN transistor in a plastic SOT23

envelope primarily intended for use in

RF wideband amplifiers and

oscillators. The transistor features

low intermodulation distortion and

high power gain; due to its very high

transition frequency, it also has

excellent wideband properties and

low noise up to high frequencies.

PNP complement is BFT92.

PINNING

DESCRIPTION

Code: P1p

base

emitter

collector

Fig.1 SOT23.

fpage

MSB003

Top view

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

DC collector current

−

Ptot

total power dissipation

up to Ts =95 °C; note 1

−

300

transition frequency

IC = 14 mA; VCE = 10 V; f = 500 MHz;

Tj =25 °C

−

GHz

Cre

feedback capacitance

IC = 2 mA; VCE = 10 V; f = 1 MHz

0.4

−

GUM

maximum unilateral power gain

IC = 14 mA; VCE = 10 V; f = 500 MHz;

Tamb =25 °C

−

noise ﬁgure

IC = 2 mA; VCE = 10 V; f = 500 MHz;

Tamb =25 °C; Zs = opt.

2.4

−

output voltage

dim = −60 dB; IC = 14 mA; VCE = 10 V;

RL =75 Ω; Tamb =25 °C;

f(p+q−r) = 493.25 MHz

150

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

DC collector current

−

Ptot

total power dissipation

up to Ts =95 °C; note 1

−

300

Tstg

storage temperature

−65

150

°C

junction temperature

−

175

°C

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