BFR92 datasheet(3/10 Pages) PHILIPS

3 / 10 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR92

THERMAL RESISTANCE

Note

1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

2. Crystal mounted in a SOT37 envelope (BFR90).

3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL =75 Ω; Tamb =25 °C;

Vp =Vo at dim = −60 dB; fp = 495.25 MHz;

Vq =Vo −6 dB; fq = 503.25 MHz;

Vr =Vo −6 dB; fr = 505.25 MHz;

measured at f(p+q−r) = 493.25 MHz.

SYMBOL

PARAMETER

CONDITIONS

THERMAL RESISTANCE

Rth j-s

thermal resistance from junction to

soldering point

up to Ts =95 °C; note 1

260 K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 10 V

−−

hFE

DC current gain

IC = 14 mA; VCE = 10 V

−

transition frequency

IC = 14 mA; VCE = 10 V; f = 500 MHz

−

GHz

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

0.75

−

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

0.8

−

Cre

feedback capacitance

IC = 2 mA; VCE = 10 V; f = 1 MHz;

Tamb =25 °C

−

0.4

−

GUM

maximum unilateral power gain

(note 1)

IC = 14 mA; VCE = 10 V;

f = 500 MHz; Tamb =25 °C

−

noise ﬁgure (see Fig.2 and note 2) IC = 2 mA; VCE = 10 V; f = 500 MHz;

Tamb =25 °C; Zs = opt.

−

2.4

−

output voltage

note 3

−

150

−

10 log

–





–





--------------------------------------------------------------

dB˙

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