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BUX10 Datasheet(PDF) 1 Page - STMicroelectronics |
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BUX10 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() BUX10 HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED APPLICATIONS s MOTOR CONTROL s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUX10 is a silicon Multi-Epitaxial Planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM March 2003 1 2 TO-3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE = 0) 160 V VCEX Collector-emitter Voltage (VBE = - 1.5V) 160 V VCEO Collector-emitter Voltage (IB = 0) 125 V VEBO Emitter-base Voltage (IC = 0) 7 V IC Collector Current 25 A ICM Collector Peak Current (tP < 10 ms) 30 A IB Base Current 5 A Ptot Total Power Dissipation at Tcase ≤ 25 oC 150 W Tstg Storage Temperature -65 to 200 oC Tj Max Operating Junction Temperature 200 oC ® 1/4 |
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