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BUT18 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUT18 Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page ![]() 1999 Jun 11 6 Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A Fig.6 Oscilloscope display for collector-emitter sustaining voltage. handbook, halfpage MGE239 IC (mA) 250 200 100 0 min VCEOsust VCE (V) Fig.7 Collector-emitter saturation voltage as a function of base current. Tj =25 °C. (1) IC =1A. (2) IC =2A. (3) IC =4A. handbook, halfpage 2 0 10−2 10−1 110 MGB884 1 VCEsat (V) IB (A) (1) (2) (3) Fig.8 Base-emitter saturation voltage as a function of base current. Tj =25 °C. (1) IC =4A. (2) IC =2A. (3) IC =1A. handbook, halfpage 1.5 0.5 10−2 10−1 110 MGB880 1 VBEsat (V) IB (A) (1) (3) (2) Fig.9 DC current gain; typical values. VCE = 5 V; Tj =25 °C. handbook, halfpage MBC097 102 10−2 10−1 110 102 10 1 IC (A) hFE VCE = 5 V 1V |
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