BUT18 datasheet(7/12 Pages) PHILIPS

Part #	BUT18

Description	Silicon diffused power transistors

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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7 / 12 page

1999 Jun 11

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUT18; BUT18A

Fig.10 Test circuit resistive load.

VCC = 250 V; tp =20 µs; VIM = −6 to +8 V; tp/T = 0.01.

The values of RB and RL are selected in accordance with ICon and

IBon requirements.

handbook, halfpage

MGE244

VCC

D.U.T.

VIM

Fig.11 Switching time waveforms with

resistive load.

tr ≤ 30 ns.

handbook, halfpage

MBB731

90%

10%

90%

10%

IB on

IB off

IC on

tr ≤30 ns

ton

Fig.12 Test circuit inductive load and reverse

bias SOAR.

VCL = up to 1000 V; VCC = 30 V; VBE = −5 V; LB =1 µH (0 for reverse

bias SOAR); LC = 200 µH.

handbook, halfpage

MGE246

+IB

−VBE

VCC

D.U.T.

VCL

Fig.13 Switching times waveforms with

inductive load.

handbook, halfpage

MGE238

90%

10%

IB on

−IB off

IC on

90%

10%

toff

BUT18 Datasheet(PDF) 7 Page - NXP Semiconductors

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