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BUT18AF Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUT18AF Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page ![]() 1999 Jun 11 6 Philips Semiconductors Product specification Silicon diffused power transistors BUT18F; BUT18AF Fig.5 Transient thermal impedance. handbook, full pagewidth MGB866 10 10−1 10−2 10−3 10−4 10−3 10−2 10−1 tp (s) 1102 10 1 Zth j−mb (K/W) 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 0 δ = 1 Fig.6 Oscilloscope display for collector-emitter sustaining voltage. handbook, halfpage MGE239 IC (mA) 250 200 100 0 min VCEOsust VCE (V) Fig.7 Collector-emitter saturation voltage as a function of base current. Tj =25 °C. (1) IC =1A. (2) IC =2A. (3) IC =4A. handbook, halfpage 2 0 10−2 10−1 110 MGB884 1 VCEsat (V) IB (A) (1) (2) (3) |
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