Philips Semiconductors

Product specification

Dual rectifier diodes

BYV74 series

ultrafast

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated, high efficiency

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

UNIT

rectifier diodes in a plastic envelope

featuring low forward voltage drop,

BYV74-

300

400

500

ultra fast reverse recovery times and

V

RRM

Repetitive peak reverse

300

400

500

V

soft recovery characteristic. They are

voltage

intended for use in switched mode

V

F

Forward voltage

1.12

1.12

1.12

V

power supplies and high frequency

I

O(AV)

Average output current

30

30

30

A

circuits in general, where both low

(both diodes conducting)

conduction losses and low switching

t

rr

Reverse recovery time

60

60

60

ns

losses are essential.

PINNING - SOT93

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

Anode 1 (a)

2

Cathode (k)

3

Anode 2 (a)

tab

Cathode (k)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-300

-400

-500

V

RRM

Repetitive peak reverse voltage

-

300

400

500

V

V

RWM

Crest working reverse voltage

-

300

400

500

V

V

R

Continuous reverse voltage

T

-

300

400

500

V

I

O(AV)

Average output current (both

square wave;

δ = 0.5;

-

30

A

diodes conducting)

1

T

sinusoidal; a = 1.57;

-

27

A

T

I

O(RMS)

RMS output current (both

-

43

A

diodes conducting)

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

30

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

150

A

current per diode.

t = 8.3 ms

-

160

A

sinusoidal; with reapplied

V

RRM(max)

I

t = 10 ms

-

112

A

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction temperature

-

150

˚C

123

tab

k

a1

a2

1

2

3

1 Neglecting switching and reverse current losses.

For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.

August 1996

1

Rev 1.200