BYV74 datasheet(2/6 Pages) PHILIPS

2 / 6 page

Philips Semiconductors

Product specification

Dual rectifier diodes

BYV74 series

ultrafast

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-hs

Thermal resistance junction to

per diode

2.4

K/W

heatsink

both diodes conducting

1.4

K/W

th j-a

Thermal resistance junction to

in free air.

K/W

ambient

STATIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Forward voltage (per diode)

F = 15 A; Tj = 150˚C

0.95

1.12

F = 15 A

1.08

1.25

F = 30 A

1.15

1.36

Reverse current (per diode)

R = VRRM

-10

µA

R = VRRM; Tj = 100 ˚C

0.3

0.8

DYNAMIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Reverse recovery charge (per

F = 2 A to VR ≥ 30 V;

diode)

F/dt = 20 A/µs

Reverse recovery time (per

F = 1 A to VR ≥ 30 V;

diode)

F/dt = 100 A/µs

rrm

Peak reverse recovery current

F = 10 A to VR ≥ 30 V;

4.2

5.2

(per diode)

F/dt = 50 A/µs; Tj = 100˚C

Forward recovery voltage (per

F = 10 A; dIF/dt = 10 A/µs

2.5

diode)

August 1996

Rev 1.200

BYV74 Datasheet(PDF) 2 Page - NXP Semiconductors

BYV74 Datasheet(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL