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SPD09P06PLG Datasheet(PDF) 1 Page - BYCHIP ELECTRONICS CO., LIMITED

Part # SPD09P06PLG
Description  P-channel Enhancement Mode Power MOSFET
PDF  4 Pages
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Manufacturer  BYCHIP [BYCHIP ELECTRONICS CO., LIMITED]
Direct Link  http://www.bychip.cn/
Logo BYCHIP - BYCHIP ELECTRONICS CO., LIMITED

SPD09P06PLG Datasheet(HTML) 1 Page - BYCHIP ELECTRONICS CO., LIMITED

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Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-60
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
-
30
A
Pulsed Drain Current
IDM
-64
A
Maximum Power Dissipation
PD
32
W
Derating factor
0.21
W/℃
Single pulse avalanche energy
(Note 5)
AS
E
65
mJ
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 175
℃
Thermal Characteristic
Thermal Resistance, Junction-to-Case
(Note 2)
RθJC
4.68
℃
/W
P-channel Enhancement Mode Power MOSFET
Features
 VDS=
-60V, ID= -30A
RDS(ON) <
55mΩ @ VGS = -10V
RDS(ON) <
65mΩ @ VGS = -4.5V
●
Advanced Trench Technology
●
Provide Excellent RDS(ON) and Low Gate
Charge
●
Lead Free and Green Available
100% UIS TESTED!
100% ΔVds TESTED!
General Features
www.bychip.cn
Pin Assignment
Schematic Diagram
TO-252-2L Top View
SPD09P06PLG
v1.0


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