2

Notes:

1. Backside temperature Tb = 25°C unless otherwise noted

2. Channel-to-backside Thermal Resistance (qch-b) = 47°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resistance

at backside temperature (Tb) = 25°C calculated from measured data.

Notes:

3. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted.

Symbol

Parameters and Test Conditions

Units

Min.

Typical

Max.

Recommended Drain Supply Current

V

5

mA

70

95

130

mA

105

°C/W

33

Symbol

Parameters and Test Conditions

Units

Min.

Typical Max.

Small-signal Gain

dB

16

19

22

Gain Slope

Positive Small-signal Gain Slope

dB/GHz

+0.21

Input Return Loss

dB

10

13

Output Return Loss

dB

10

14

Reverse Isolation

dB

- 55

Output Power at 1 dB Gain Compression @ 20 GHz

dBm

12.5

15

Saturated Output Power (3dB Gain Compression) @ 20 GHz

dBm

14.5

17

OIP3

Output 3rd Order Intercept Point @ 20 GHz

dBm

23.5

NF

Noise Figure @ 20 GHz

dB

4.2

5.0