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ISF1324 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISF1324 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1324 eq IXTK210P10T Trenched P-Channel MOSFET www.iscsemi.com 1 FEATURES · Drain Current -ID= -210A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.5mΩ(Max)@VGS= -10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC) ABSOLUTE MAXIMUM RATINGS (TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage-Continuous ± 15 V ID Drain Current-Continuous -210 A IDM Drain Current-Single Pulse -800 A PD Total Dissipation @TC=25℃ 1040 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.12 ℃ /W |
Similar Part No. - ISF1324 |
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Similar Description - ISF1324 |
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