Figure 7. Relative variation of static dV/dt immunity

versus junction temperature

0

1

2

3

4

5

25

50

75

100

125

150

dV/dt [Tj] / dV/dt [Tj=150 °C]

VD= 536 V

Tj(°C)

Figure 8. Surge peak on-state current versus number of

cycles

0

100

200

300

400

500

600

1

10

100

1000

ITSM(A)

Number of cycles

Non repetitive

Tj initial = 25 °C

Repetitive

TC = 122 °C

Figure 9. Non repetitive surge peak on-state current for a

sinusoidal pulse with width tp < 10 ms

1

10

100

1000

10000

0.10

1.00

10.00

ITSM(A

)

tP(ms)

ITSM

Tj initial=25 °C

Figure 10. On-state characteristics (maximum values)

0.1

1.0

10.0

100.0

1000.0

0.0

1.0

2.0

3.0

4.0

5.0

Tj max : 150 °C

Vto = 0.85 V

Rd = 8 mW

VTM (V)

I TM(A)

Tj = 25 °C

Tj = 150 °C

Figure 11. Relative variation of leakage current versus

junction temperature

1.E-02

1.E-01

1.E+00

25

50

75

100

125

150

IDRM, IRRM [VDRM, VRRM, TJ] / IDRM, IRRM,[TJ = 150 °C]

V DRM

= V

RRM

= 800

V

Tj(°C)

Figure 12. Thermal resistance junction to ambient versus

copper surface under tab

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

Rth(j -a)(°C/W) [SCu]

SCu(cm²)

Ecu = 35 µm

Ecu = 70 µm

Ecu = 105 µm

D²PAK)

TN5015H-8G

Characteristics

DS14482 - Rev 2

page 5/12