Characteristics

STPS2545C

2/11

DocID8736 Rev 5

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

45

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward current δ = 0.5,

square wave

TC = 160 °C

Per diode

12.5

A

TC = 155 °C

Per device

25

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal

200

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

345

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (1)

175

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

1.6

°C/W

Total

1.1

Rth(c)

Coupling

0.6

°C/W

When the diodes 1 and 2 are used simultaneously:

ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

125

µA

Tj = 125 °C

-

9

25

mA

VF(1)

Forward voltage drop

Tj = 125 °C

IF = 12.5 A

-

0.50

0.57

V

Tj = 25 °C

IF = 25 A

-

0.84

Tj = 125 °C

-

0.65

0.72

Notes:

(1)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.42 x IF(AV) + 0.012 x IF2(RMS)