STPS2545CT datasheet(3/11 Pages) STMICROELECTRONICS

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STPS2545C

Characteristics

DocID8736 Rev 5

3/11

1.1

Characteristics (curves)

Figure 1: Conduction losses versus average

current, per diode)

Figure 2: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values, per diode)

0.0

2.5

5.0

7.5

10.0

12.5

15.0

= 0.05

= 0.1

= 0.2

= 0.5

= 1

= tp/T

PF(AV)(W)

IF(AV)(A)

100

125

150

175

(°C)

amb

Rt h(j-a)=Rth(j-c)

Rth(j-a)= 50° C/W

=tp/T

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

0. 0

0. 1

0. 2

0. 3

0. 4

0. 5

0.6

0. 7

0. 8

0. 9

1. 0

1.E - 03

1.E - 02

1.E - 01

1.E + 00

t (s )

= 0.5

= 0.2

= 0.1

S ingle puls e

=tp/T

Zth(j-c) /Rth(j-c)

1.E - 03

1.E - 02

1.E - 01

1.E + 00

1.E + 01

1.E + 02

V (V)

Tj=150°C

Tj=125°C

Tj=25°C

Tj=100°C

Tj=75°C

Tj=50°C

IR(mA)

0. 1

1. 0

10.0

V (V)

F =1MHz

Vosc=30mV

Tj=25°C

C (nF)

100

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