AP40H10NF

100V N+N-Channel Enhancement Mode MOSFET

AP40H10NF RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

BVDSS

Drain-source breakdown

voltage

VGS=0 V, ID=250 μA

100

107

V

VGS(th)

Gate threshold voltage

VDS=VGS, ID=250 μA

1.2

1.5

2.5

V

RDS(ON)

Drain-source on-state

resistance

VGS=10 V, ID=10 A

14

20

mΩ

RDS(ON)

Drain-source on-state

resistance

VGS=4.5 V, ID=7 A

18

25

mΩ

IGSS

Gate-source leakage current

VGS=±20 V

±100

nA

IDSS

Drain-source leakage current

VDS=100 V, VGS=0 V

1

uA

Ciss

Input capacitance

VGS=0 V,

VDS=50 V,

ƒ=100 kHz

1003.9

pF

Coss

Output capacitance

185.4

pF

Crss

Reverse transfer capacitance

9.8

pF

td(on)

Turn-on delay time

VGS=10 V,

VDS=50 V,

RG=10 Ω,

ID=5 A

16.6

ns

tr

Rise time

3.8

ns

td(off)

Turn-off delay time

75.5

ns

tf

Fall time

46

ns

Qg

Total gate charge

ID=5 A,

VDS=50V,

VGS=10V

16.2

nc

Qgs

Gate-source charge

2.8

nc

Qgd

Gate-drain charge

4.1

nc

Vplateau

Gate plateau voltage

3

V

IS

Diode forward current

VGS<Vth

30

A

ISP

Pulsed source current

90

A

trr

Reverse recovery time

IS=1A, di/dt=100 A/μs

49

ns

Qrr

Reverse recovery charge

61.8

nc

Irrm

Peak reverse recovery current

2.4

A

Note :

1、Calculated continuous current based on maximum allowable junction temperature.

2、Repetitive rating; pulse width limited by max. junction temperature.

3、Pd is based on max. junction temperature, using junction-case thermal resistance.

4、The value of RΘja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment

with Ta=25 °C.

5、VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 °C.