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STB85NF55 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STB85NF55
Description  N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET™ II POWER MOSFET
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB85NF55 Datasheet(HTML) 1 Page - STMicroelectronics

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January 2003
STB85NF55
STP85NF55
N-CHANNEL 55V - 0.0062
Ω - 80A D2PAK/TO-220
STripFET™ II POWER MOSFET
s
TYPICAL RDS(on) = 0.0062 Ω
s
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based
process.
The
resulting
transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
TYPE
VDSS
RDS(on)
ID
STB85NF55
STP85NF55
55 V
55 V
<0.008
Ω
<0.008
Ω
80 A
80 A
1
2
3
TO-220
1
3
D2PAK
TO-263
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
(
•)Current Limited by Package
(
••) Pulse width limited by safe operating area
(1)ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC ID = 40A
VDD = 25V
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
55
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
55
V
VGS
Gate- source Voltage
± 20
V
ID(•)
Drain Current (continuous) at TC = 25°C
80
A
ID
Drain Current (continuous) at TC = 100°C
80
A
IDM(••)
Drain Current (pulsed)
320
A
Ptot
Total Dissipation at TC = 25°C
300
W
Derating Factor
2.0
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
10
V/ns
EAS (2)
Single Pulse Avalanche Energy
980
mJ
Tstg
Storage Temperature
-55 to 175
°C
Tj
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM


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