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STD2NB80 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD2NB80 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  STD2NB80 N - CHANNEL 800V - 4.6 Ω - 1.9A - IPAK/DPAK PowerMESH ™ MOSFET s TYPICAL RDS(on) = 4.6 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL (2500 UNITS) DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM January 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it VDS Drain-source Voltage (VGS =0) 800 V VDGR Drain- gate Volt age (RGS =20 k Ω) 800 V VGS G ate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 oC1.9 A ID Drain Current (continuous) at Tc =100 oC1.2 A IDM ( •) Drain Current (pulsed) 7.6 A Ptot T otal Dissipation at Tc =25 oC55 W Derating Factor 0.44 W / o C dv/dt (1) Peak Diode Recovery volt age slope 4.5 V/ns Tstg Storage Temperat ure -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 2A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID ST D2NB80 800 V < 6.5 Ω 1.9 A 3 2 1 IPAK TO-251 (Suffix ”-1”) 1 3 DPAK TO-252 (Suffix ”T4”) ® 1/9 |
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