STN2NE10 datasheet(2/5 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-pcb

Rthj-amb

Thermal Resistance Junction-PC Board

Max

Thermal Resistance Junction-ambient

Max

(Surface Mounted)

Maximum Lead Temperature For Soldering Purpose

260

oC/W

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25

o C, I

D = IAR, VDD = 25 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250

µA

VGS = 0

100

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

Tc = 125

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS =

± 20 V

± 100

ON (

∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage VDS = VGS ID = 250

µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 1A

0.33

0.4

Ω

ID(on)

On State Drain Current

VDS > ID(on) x RDS(on)max

VGS = 10 V

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (

∗)

Forward

Transconductance

VDS > ID(on) x RDS(on)max

ID = 1 A

1.8

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25 V

f = 1 MHz

VGS = 0 V

305

STN2NE10

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