STP80NF55 datasheet(3/17 Pages) STMICROELECTRONICS

3 / 17 page

STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP

Electrical ratings

3/17

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 / D²/ I²PAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

VGS

Gate-source voltage

± 20

(1)

Limited by Package

Drain current (continuous) at TC = 25°C

60 (2)

Limited only by maximum temperature allowed

(1)

Drain current (continuous) at TC=100°C

42 (2)

IDM

(3)

Pulse width limited by safe operating area

Drain current (pulsed)

320

240 (2)

PTOT

Total dissipation at TC = 25°C

300

Derating factor

0.30

W/°C

dv/dt (4)

) ISD ≤80A, di/dt ≤400A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

Peak diode recovery voltage slope

V/ns

EAS

(5)

Starting TJ = 25

oC, I

D = 40A, VDD = 45V

Single pulse avalanche energy

1.3

VISO

Insulation withstand voltage (DC)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 175

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

TO-220 / D²/ I²PAK

TO-220FP

RthJC

Thermal resistance junction-case max

0.5

3.33

°C/W

RthJA

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

STP80NF55 Datasheet(PDF) 3 Page - STMicroelectronics

STP80NF55 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Datasheet Download

Link URL