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STP80NF55 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STP80NF55
Description  N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP80NF55 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP
4/17
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
55
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 40A
0.005 0.0065
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS =15V, ID = 40A
150
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
4400
1020
350
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 44V, ID = 80A
VGS =10V
142
29
60.5
189
nC
nC
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD= 50 V, ID= 40A,
RG=4.7Ω, VGS=10V
(see Figure 15)
27
155
125
65
ns
ns
ns
ns



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