1

Rev. V1

MA4PBL027

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Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications,

simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications

are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be

available. Commitment to produce in volume is not guaranteed.

Case Style ODS-1302

Cathode

side

top

A

B

C

D

E

F

Features

•

Beam-Lead Device

•

No Wirebonds Required

•

Rugged Silicon-Glass Construction

•

Silicon Nitride Passivation

•

Polymer Scratch and Impact Protection

•

Low Parasitic Capacitance and Inductance

•

Ultra Low Capacitance < 40 fF

•

Excellent RC Product < 0.10 pS

•

High Switching Cutoff Frequency > 110 GHz

•

110 Nanosecond Minority Carrier Lifetime

•

Driven by Standard +5V TTL PIN Diode Driver

Description

This device is a Silicon-Glass Beam-Lead PIN diode fabricated

with M/A-COM’s patented HMIC

TM

process. This device

features one silicon pedestal embedded in a low loss, low

dispersion glass which supports the beam-leads. The diode is

formed on the top of the pedestal, and airbridges connect the

diode to the beam-leads. The topside is fully encapsulated with

silicon nitride and has an additional polymer layer for scratch

and impact protection. These protective coatings prevent

damage to the junction and the air-bridges during handling and

assembly.

The diodes themselves exhibit low series resistance, low

capacitance, and extremely fast switching speed.

Applications

The ultra low capacitance of this device allows use through W-

band (110 GHz) applications. The low RC product and low

profile of the PIN diodes makes it ideal for use in microwave

and millimeter wave switch designs, where lower insertion loss

and higher isolation are required. The + 10 mA ( low loss state )

and the 0v ( isolation state ) bias of the diodes allows the use a

simple + 5V TTL gate driver. These diodes are used as

switching arrays on radar systems, high-speed ECM circuits,

optical switching networks, instrumentation, and other wideband

multi-throw switch assemblies.

Absolute Maximum Ratings

1

@ TA = +25°C ( Unless otherwise specified )

Parameter

Absolute Maximum

Forward Current

100 mA

Reverse Voltage

90 V

Operating Temperature

-55

°C to +125 °C

Storage Temperature

-55

°C to +150 °C

Junction Temperature

+ 175

°C

RF C.W. Incident Power

30 dBm C.W.

RF & DC Dissipated Power

150 mW

Mounting Temperature

+235

°C for 10

seconds

1. Exceeding these limits may cause permanent damage.