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2SB601 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB601 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB601 DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For low-frequency power amplifier and low-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current-DC -5 A ICM Collector current-Pulse -8 A IB Base current-DC -0.5 A TC=25℃ 30 PT Total power dissipation Ta=25℃ 1.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
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