B1383 datasheet(2/2 Pages) ISC

Part #	B1383

Description	isc Silicon PNP Darlington Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB1383

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -25mA ,IB= 0

-120

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -12A ,IB= -24mA

-1.8

VBE(sat)

Base-Emitter Saturation Voltage

IC= -12A ,IB= -24mA

-2.5

ICBO

Collector Cutoff current

VCB= -120V, IE= 0

-10

μA

IEBO

Emitter Cutoff current

VEB= -6V, IC= 0

-10

hFE

DC Current Gain

IC= -12A ; VCE= -4V

2000

COB

Output Capacitance

IE= 0; VCB= -10V; ftest= 1MHz

230

Current-Gain—Bandwidth Product

IE= 1A ; VCE= -12V

MHz

Switching Times

ton

Turn-On Time

1.0

μs

tstg

Storage Time

3.0

μs

Fall Time

IC = -12A,IB1 = -IB2= -24mA;

VCC= -24V, RL= 2Ω

1.0

μs

isc Website：www.iscsemi.cn

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