B0520WS datasheet(1/2 Pages) HTSEMI

Part #	B0520WS

Description	SCHOTTKY BARRIER DIODE

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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SCHOTTKY BARRIER DIODE

FEATURES

Low Forward Voltage Drop

Guard Ring Construction for Transi

High Conductance

-

Also Available in Lead Free Version

MARKING: B0520WS: SD

B0530WS: SE

B0540WS: SF

Maximum Ratings @TA=25

℃

Parameter

Symbol

B0520WS

B0530WS

B0540WS

Unit

Peak Repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking

Voltage

VRRM

VRWM

VR

20

30

40

V

RMS Reverse Voltage Reverse voltage (DC)

VR(RMS)

14

21

28

V

Average rectified output Current

Io

0.5

A

Forward current surge peak

IFSM

5.5

A

Power dissipation

PD

200

mW

Thermal Resistance Junction to Ambient

RθJA

625

℃/W

Junction temperature

Tj

150

℃

Storage temperature

TSTG

-65~+150

℃

Voltage Rate of Change

dv/dt

1000

V/μS

Electrical Characteristics @TA=25

℃

Parameter

Symbol

B0520WS

B0530WS

B0540WS

Unit

Conditions

20

--

IR=250μA

--

30

--

IR=500μA

Minimum Reverse

Breakdown Voltage

V(BR)R

--

40

V

IR=20μA

VF1

0.3

0.36

--

IF=0.1A

VF2

0.385

0.45

0.510

IF=0.5A

Forward voltage

VF3

--

0.62

V

IF=1A

IR1

75

--

VR=10V

Reverse current

IR2

--

80

--

μA

VR=15V

IR3

250

100

10

VR=20V

IR4

--

500

--

VR=30V

Reverse current

IR5

--

20

μA

VR=40V

Capacitance between terminals

CT

170

pF

VR=0,f=1MHz

SOD-323

B0520WS/B0530WS/B0540WS

ent Protection

１　

Ｄａｔｅ：２０１１／０５

www.htsemi.com

semiconductor

JinYu

+

-

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B0520WS Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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