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ZXGD3105N8 Datasheet(PDF) 10 Page - Diodes Incorporated

Part # ZXGD3105N8
Description  Low standby power with quiescent supply current < 1mA
PDF  13 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXGD3105N8 Datasheet(HTML) 10 Page - Diodes Incorporated

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ZXGD3105N8
Document Number DS35101 Rev. 1 – 2
10 of 13
www.diodes.com
November 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXGD3105N8
Gate driver
The controller is provided with single channel high current gate drive output, capable of driving one or more N-
channel power MOSFETs. The controller can operate from Vcc of 4.5V to drive both standard MOSFETs and logic
level MOSFETs.
The Gate pins should be as close to the MOSFET’s gate as possible. A resistor in series with GATE pin helps to
control the rise time and decrease switching losses due to gate voltage oscillation. A diode in parallel to the resistor
is typically used to maintain fast discharge of the MOSFET’s gate.
Figure 3 - Typical connection of the ZXGD3105 to the synchronous MOSFET
Quiescent current consumption
The quiescent current consumption of the controller is the sum of IREF and IBIAS. For an application that requires ultra-
low standby power consumption, IREF and IBIAS can be further reduced by increasing the value of resistor RREF and
RBIAS.
Bias Current
IBIAS
Ref Current
IREF
Bias Resistor
RBIAS
Ref Resistor
RREF
Quiescent Current
IQ
0.25mA
0.61mA
39.2K
15.4K
0.86mA
0.35mA
0.81mA
28.0K
11.5K
1.16mA
0.46mA
0.99mA
21.5K
9.3K
1.45mA
0.50mA
1.00mA
19.6K
8.9K
1.50mA
0.55mA
1.13mA
17.8K
8.1K
1.68mA
0.80mA
1.66mA
12.1K
5.6K
2.46mA
Table 2 – Quiescent current consumption for different resistor values at Vcc=10V
IREF also controls the gate driver peak sink current whilst IBIAS controls the peak source current. At the default current
value of IREF and IBIAS of 1.02mA and 0.54mA, the gate driver is able to provide 2A source and 6A sink current. The
gate current decreases if IREF and IBIAS are reduced. Care must be taken in reducing the controller quiescent current
so that sufficient drive current is still delivered to the MOSFET particularly for high switching frequency application.



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