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1N60PL-T92-R Datasheet(PDF) 3 Page - Unisonic Technologies

Part # 1N60PL-T92-R
Description  1.2A, 600V N-CHANNEL POWER MOSFET
PDF  6 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

1N60PL-T92-R Datasheet(HTML) 3 Page - Unisonic Technologies

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1N60P
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-634.A
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
600
V
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V
10
μA
Forward
VGS=30V, VDS=0V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS=-30V, VDS=0V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BVDSS/T
△ J ID=250μA
0.4
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=0.6A
9.3 11.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
120 150
pF
Output Capacitance
COSS
20
25
pF
Reverse Transfer Capacitance
CRSS
VDS=25V, VGS=0V, f=1MHz
3.0
4.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
5
20
ns
Turn-On Rise Time
tR
25
60
ns
Turn-Off Delay Time
tD(OFF)
7
25
ns
Turn-Off Fall Time
tF
VDD=300V, ID=1.2A, RG=50Ω
(Note 2, 3)
25
60
ns
Total Gate Charge
QG
5.0
6.0
nC
Gate-Source Charge
QGS
1.0
nC
Gate-Drain Charge
QGD
VDS=480V, VGS=10V, ID=1.2A
(Note 2, 3)
2.6
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS =1.2A
1.4
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.2
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
4.8
A
Reverse Recovery Time
trr
160
ns
Reverse Recovery Charge
QRR
VGS=0V, IS=1.2A
dIF/dt=100A/μs (Note 1)
0.3
μC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
3. Essentially Independent of Operating Temperature



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