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1N60PL-T92-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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1N60PL-T92-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-634.A 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 1N60PL-T92-B 1N60PG-T92-B TO-92 G D S Tape Box 1N60PL-T92-K 1N60PG-T92-K TO-92 G D S Bulk 1N60PL-T92-R 1N60PG-T92-R TO-92 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
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