2N7000

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-059.C

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

60

V

Continuous

±20

V

Gate -Source Voltage

Non Repetitive (tp<50

μs)

±40

V

Continuous

115

mA

Maximum Drain Current

Pulsed

800

mA

Maximum Power Dissipation

Derated above 25

°C

400

3.2

mW

mW/

°C

Operating and Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

312.5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

1

μA

Drain-Source Leakage Current

0.5

mA

Gate-Body leakage, Forward

100

nA

Gate-Body leakage Reverse

-100

nA

ON CHARACTERISTICS

(Note)

Gate Threshold Voltage

1

2.1

2.5

V

1.2

1.7

7.5

13.5

Static Drain-Source On-Resistance

1.7

2.4

7.5

13.5

Ω

0.6

3.75

Drain-Source On-Voltage

0.09

1.5

V

On-State Drain Current

≧

DS(ON)

500

2700

mA

DYNAMIC CHARACTERISTICS

Input Capacitance

20

50

pF

Output Capacitance

11

25

pF

Reverse Transfer Capacitance

4

5

pF

Turn-On Time

20

ns

Turn-Off Time

20

ns

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward

Voltage

0.88

1.5

V

Maximum Continuous Drain-Source

Diode Forward Current

Is

115

mA

Maximum Pulsed Drain-Source

Diode Forward Current

0.8

A

Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%