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2N7002ZG-AE2-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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2N7002ZG-AE2-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD 2N7002Z Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-273.G 300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) <7.5Ω * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 2N7002ZL-AE2-R 2N7002ZG-AE2-R SOT-23-3 S G D Tape Reel MARKING |
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