2N3700HR datasheet(3/12 Pages) STMICROELECTRONICS

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2N3700HR

Electrical characteristics

Doc ID 15354 Rev 4

3/12

Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 5.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off

current (IE = 0)

VCB = 90 V

Tamb = 110 °C

VCB = 90 V

Tamb = 150 °C

100

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = 100 µA

140

V(BR)CEO

(1)

Pulsed duration = 300 µs, duty cycle

≤ 2 %

Collector-emitter

breakdown voltage

(IB = 0)

IC = 30 mA

V(BR)EBO

Emitter-base

breakdown voltage

(IC = 0)

IE = 100 µA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 150 mA

IB = 15 mA

IC = 500 mA

IB = 50 mA

0.2

0.5

VBE(sat)

(1)

Base-emitter

saturation voltage

IC = 150 mA

IB = 15 mA

IC = 150 mA

IB = 15 mA

Tamb = 110 °C

0.75

0.65

0.87

0.77

0.9

hFE

(1)

DC current gain

IC = 10 mA

VCE = 10 V

IC = 150 mA

VCE = 10 V

IC = 500 mA

VCE = 10 V

IC = 150 mA

VCE = 10 V

Tamb = - 55 °C

100

300

hfe

Small signal current

gain

VCE = 10 V

IC = 50 mA

f = 20 MHz

CCBO

Output capacitance

(IE = 0)

VCB = 10 V

f = 1 MHz

CIBO

Input capacitance

(IC = 0)

VEB = 0.5 V

f = 1 MHz

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