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MCP1725-0802EMC Datasheet(PDF) 19 Page - Microchip Technology |
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MCP1725-0802EMC Datasheet(HTML) 19 Page - Microchip Technology |
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19 / 32 page ![]() © 2007 Microchip Technology Inc. DS22026B-page 19 MCP1725 4.8 Dropout Voltage and Undervoltage Lockout Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below the nominal value that was measured with a VR + 0.6V differential applied. The MCP1725 LDO has a very low dropout voltage specification of 210 mV (typical) at 0.5A of output current. See Section 1.0 “Electrical Characteristics” for maximum dropout voltage specifications. The MCP1725 LDO operates across an input voltage range of 2.3V to 6.0V and incorporates input Undervolt- age Lockout (UVLO) circuitry that keeps the LDO output voltage off until the input voltage reaches a minimum of 2.18V (typical) on the rising edge of the input voltage. As the input voltage falls, the LDO output will remain on until the input voltage level reaches 2.04V (typical). Since the MCP1725 LDO undervoltage lockout activates at 2.04V as the input voltage is falling, the dropout voltage specification does not apply for output voltages that are less than 1.9V. For high-current applications, voltage drops across the PCB traces must be taken into account. The trace resistances can cause significant voltage drops between the input voltage source and the LDO. For applications with input voltages near 2.3V, these PCB trace voltage drops can sometimes lower the input voltage enough to trigger a shutdown due to undervoltage lockout. 4.9 Overtemperature Protection The MCP1725 LDO has temperature-sensing circuitry to prevent the junction temperature from exceeding approximately 150°C. If the LDO junction temperature does reach 150°C, the LDO output will be turned off until the junction temperature cools to approximately 140°C, at which point the LDO output will automatically resume normal operation. If the internal power dissipation continues to be excessive, the device will again shut off. The junction temperature of the die is a function of power dissipation, ambient temperature and package thermal resistance. See Section 5.0 “Appli- cation Circuits/Issues” for more information on LDO power dissipation and junction temperature. |
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