STM8L152M8 datasheet(91/134 Pages) STMICROELECTRONICS

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STM8L15xx8, STM8L15xR6

Electrical parameters

121

Figure 22. LSE oscillator circuit diagram

Internal clock sources

Subject to general operating conditions for VDD, and TA.

High speed internal RC oscillator (HSI)

In the following table, data are based on characterization results, not tested in production,

unless otherwise specified.

tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation.

This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

OSC_OUT

OSC_IN

fLSE

CL1

CL2

STM8

Resonator

Consumption

control

Resonator

MS32624V1

Table 33. HSI oscillator characteristics

Symbol

Parameter

Conditions(1)

Min.

Typ.

Max.

Unit

fHSI

Frequency

VDD = 3.0 V

MHz

ACCHSI

Accuracy of HSI

oscillator (factory

calibrated)

VDD = 3.0 V, TA = 25 °C

-1 (2)

1 (2)

VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C

-1.5

1.5

VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C

-2

VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C

-2.5

VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C

-4.5

1.65 V

≤VDD ≤ 3.6 V,

-40 °C

≤TA ≤ 125 °C

-4.5

TRIM

HSI user trimming

step(3)

Trimming code

≠ multiple of 16

0.4

0.7

Trimming code = multiple of 16

± 1.5

tsu(HSI)

HSI oscillator setup

time (wakeup time)

3.7

6 (4)

µs

IDD(HSI)

HSI oscillator power

consumption

100

140(4)

µA

1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.

2. Tested in production.

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