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STM8L152M8 Datasheet(PDF) 96 Page - STMicroelectronics |
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STM8L152M8 Datasheet(HTML) 96 Page - STMicroelectronics |
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96 / 134 page ![]() Electrical parameters STM8L15xx8, STM8L15xR6 96/134 DocID17943 Rev 6 Table 38. I/O static characteristics Symbol Parameter Conditions(1) Min. Typ. Max. Unit VIL Input low level voltage(2) Input voltage on true open-drain pins (PC0 and PC1) Vss-0.3 0.3 x VDD V Input voltage on five- volt tolerant (FT) pins Vss-0.3 0.3 x VDD Input voltage on any other pin Vss-0.3 0.3 x VDD VIH Input high level voltage (2) Input voltage on true open-drain pins (PC0 and PC1) with VDD < 2 V 0.70 x VDD 5.2 V Input voltage on true open-drain pins (PC0 and PC1) with VDD ≥ 2 V 5.5 Input voltage on five- volt tolerant (FT) pins with VDD < 2 V 0.70 x VDD 5.2 Input voltage on five- volt tolerant (FT) pins with VDD ≥ 2 V 5.5 Input voltage on any other pin 0.70 x VDD VDD+0.3 Vhys Schmitt trigger voltage hysteresis (3) Standard I/Os 200 mV True open drain I/Os 200 Ilkg Input leakage current (4) VSS≤VIN≤VDD Standard I/Os -- 50 (5) nA VSS≤VIN≤VDD True open drain I/Os - - 200(5) VSS≤VIN≤VDD PA0 with high sink LED driver capability - - 200(5) RPU Weak pull-up equivalent resistor(2)(6) VIN=VSS 30 45 60 k Ω CIO I/O pin capacitance 5 pF 1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified. 2. Data based on characterization results, not tested in production. 3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 4. The max. value may be exceeded if negative current is injected on adjacent pins. 5. Not tested in production. 6. RPU pull-up equivalent resistor based on a resistive transistor (corresponding IPU current characteristics described in Figure 28). |
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